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In many cases, the end of the year gives you time to step back and take stock of the last 12 months. This is when many of us take a hard look at what worked and what did not, complete performance reviews, and formulate plans for the coming year. For me, it is all of those things plus a time when I u...
X-FAB and Anvo-Systems Dresden Cooperate to Provide High-Speed Non-Volatile Memory Solutions

Leading analog/mixed-signal foundry supplier X-FAB Silicon Foundries and non-volatile memory specialist Anvo-Systems Dresden today announced a cooperative agreement to offer high-speed non-volatile memory solutions that combine SRAM, DRAM and SONOS FLASH technologies; the compact design results in a small silicon footprint that keeps device costs low. In this partnership, Anvo-Systems Dresden provides the IP and design expertise, and X-FAB provides the semiconductor manufacturing process, capacity and quality assurance. The new nvSRAM solutions are ideal for solutions requiring high reliability and security, such as for medical, communication, automotive, bio-technology and industrial control and metering applications.

Anvo-Systems Dresden’s novel nvSRAM approach offers multiple cost and energy-saving advantages compared to traditional Flash and EEPROM solutions. It combines the typical SRAM features with extremely robust, energy-efficient and cost-effective SONOS FLASH technology. The nvSRAM IP blocks come with unlimited and fast (20ns) read and write operation and a standard SRAM interface. A full parallel data backup up to 125Mb/s guarantees fast store operation. Because the energy for storage is gathered during the normal operation cycle, no additional customer control circuitry is needed. In addition, the compact design and small silicon footprint hold down device costs.

To guarantee stable and reliable production of the nvSRAM solutions, X-FAB has installed a dedicated 0.18 micrometer manufacturing process on 8-inch wafers optimized for highly reliable memories based on SONOS architecture. The special memory solutions developed by Anvo-Systems Dresden survive γ-ray sterilization.

Anvo-Systems Dresden, after introducing its serial nvSRAM product families earlier this year, recently released a new parallel 256k nvSRAM product family with 25ns access time, unlimited Read/Write cycles, multiple STORE options and unique security features. The company will present its parallel nvSRAM solution at the electronica show in Munich next week (Hall A6, Booth 565).

As part of X-FAB’s X-CHAIN design and supply chain partner network, Anvo-Systems is among more than 30 companies specialized in chip design, test, assembly, supply chain management or turnkey IC solutions. The network partners provide additional services to X-FAB’s customers that go beyond the pure-play foundry approach.

About Anvo-Systems

Anvo-Systems Dresden is a fabless semiconductor company and IP provider specialized in highly reliable, monolithic non-volatile data storage system solutions in industrial and communication environments. Anvo-Systems Dresden builds standard non-volatile memory products based on own technology development and provides intellectual property to customers. On January 13, 2009, Anvo-Systems Dresden was founded as a privately held company (GmbH) with the vision of setting new performance standards to the nvSRAM world. For more information, please, visit

About X-FAB

X-FAB is the leading analog/mixed-signal foundry group manufacturing silicon wafers for analog-digital integrated circuits (mixed-signal ICs). X-FAB maintains wafer production facilities in Erfurt, Dresden and Itzehoe (Germany); Lubbock, Texas (U.S.); and Kuching, Sarawak (Malaysia); and employs approximately 2,400 people worldwide. Wafers are manufactured based on advanced modular CMOS and BiCMOS processes, as well as MEMS processes, with technologies ranging from 1.0 to 0.13 micrometers for applications primarily in the automotive, communications, consumer and industrial sectors. For more information, please visit

IC Integrated circuit
IP Intellectual property
NVM Non-volatile memory
nvSRAM Non-volatile Static Random-Access Memory
CMOS Complementary metal oxide semiconductor
SONOS Silicon-Oxide-Nitride-Oxide-Silicon

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